Researchers at the University of Texas (UT) at Austin, Oak Ridge National Laboratory, and Arizona State University have built one of the three components of a ferroelectric field-effect transistor (FeFET). The transistor promises to offer data storage that is quickly accessible and non-volatile. As part of the transistor that is open or closed, corresponding to the 0s and 1s in a computer's binary language, the gate would retain its state when no power is applied. Computing devices with memories built on FeFETs would be less vulnerable to losing information, and would boot up very quickly when turned on. The team developed a computer model of a crystal structure with the desired properties, and then used molecular beam epitaxy to grow a layer of barium titanate on a block of germanium. To read further, please visit https://cns.utexas.edu/news/new-research-points-way-to-less-vulnerable-computer-memory.